| Monocrystalline Silicon wafers (CZ or FZ) |
Conductivity
Type: N Dopant Resistivity (Ohm.cm) P Dopant Resistivity (Ohm.cm)
Antimony .005 - .025 Boron .001 - 1000
Phosphorous .01 - 300
ND 300 - >3000
Type: N Dopant Resistivity (Ohm.cm) P Dopant Resistivity (Ohm.cm)
Antimony .005 - .025 Boron .001 - 1000
Phosphorous .01 - 300
ND 300 - >3000
Crystal
Orientation: Any within the diamond cubic system
Surface Orientation Accuracy to +/- 6 minutes (0.1degree)
Flat Alignment Accuracy to +/- 6minutes (0.1degree)
Orientation: Any within the diamond cubic system
Surface Orientation Accuracy to +/- 6 minutes (0.1degree)
Flat Alignment Accuracy to +/- 6minutes (0.1degree)
Surface Single and Double-side polished
Preparation: Diameter Thickness Lower TTV Limit
1"/ 2"/ 3" or Diced 200 - 2000 um < 1um
100 - 150 mm 200 - 3000 um < 1um
200mm 300 - 1200 um < 5um
Surface Metal Contamination: Al, Ca, Cr, Cu, Fe, K, Na, Ni, and Zn <= 5E10 Atoms per cm3
Request for non-standard items will be reviewed on a case by case basis
Preparation: Diameter Thickness Lower TTV Limit
1"/ 2"/ 3" or Diced 200 - 2000 um < 1um
100 - 150 mm 200 - 3000 um < 1um
200mm 300 - 1200 um < 5um
Surface Metal Contamination: Al, Ca, Cr, Cu, Fe, K, Na, Ni, and Zn <= 5E10 Atoms per cm3
Request for non-standard items will be reviewed on a case by case basis
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| Semiconductor Processing Company 12 Channel Street #702 Boston, MA 02210 Voice (617) 345-9936 FAX (617) 345-9271 |
| Silicon On Insulator (SOI) |
Wafer Diameters 2"/3"/100mm/125mm/150mm/200mm
Device Layer Materials CZ or FZ
Device Layer Orientations Any Orientation with in diamond cubic system
Device Layer Thickness >=1.5um for 2"- 100mm, >2um for 150mm - 200mm
Device Layer TTV < 1.0um
Buried Oxide (Box) Thickness .1 to 4um (1.0um +/-5% standard)
Handle Wafer Materials CZ or FZ
Handle Wafer Orientations Any Orientation within diamond cubic system
Handle Wafer Thickness >= 200um for 2"-125mm, >=275um for 150mm-200mm
Handle Wafer TTV < 1.0um
Handle Wafer Back Surface Polished or Lapped & Etched
Overall Wafer TTV < 1.0 um
Overall Bow/Warp < 10 um
Surface Metal Contamination: Al, Ca, Cr, Cu, Fe, K, Na, Ni, and Zn <= 5E10 Atoms per cm3
Device Layer Materials CZ or FZ
Device Layer Orientations Any Orientation with in diamond cubic system
Device Layer Thickness >=1.5um for 2"- 100mm, >2um for 150mm - 200mm
Device Layer TTV < 1.0um
Buried Oxide (Box) Thickness .1 to 4um (1.0um +/-5% standard)
Handle Wafer Materials CZ or FZ
Handle Wafer Orientations Any Orientation within diamond cubic system
Handle Wafer Thickness >= 200um for 2"-125mm, >=275um for 150mm-200mm
Handle Wafer TTV < 1.0um
Handle Wafer Back Surface Polished or Lapped & Etched
Overall Wafer TTV < 1.0 um
Overall Bow/Warp < 10 um
Surface Metal Contamination: Al, Ca, Cr, Cu, Fe, K, Na, Ni, and Zn <= 5E10 Atoms per cm3
| Germanium On Insulator (GeOI) |
Wafer Diameters 100mm/125mm/150mm/200mm
Device Layer Materials Sb / Ga / As
Device Layer Orientations (100) / (111) Others on Request
Device Layer Thickness >=1.5 um
Device Layer TTV < 1.0 um
Buried Oxide (Box) Thickness .1 to 4um (1.0um +/-5% standard)
Handle Wafer Materials CZ or FZ
Handle Wafer Orientations Any Orientation within diamond cubic system
Handle Wafer Thickness >= 200um for 100mm - 125mm, >=275um for 150mm-200mm
Handle Wafer TTV < 1.0um
Handle Wafer Back Surface Polished or Lapped & Etched
Overall Wafer TTV < 3 um
Overall Bow/Warp < 60 um
Device Layer Materials Sb / Ga / As
Device Layer Orientations (100) / (111) Others on Request
Device Layer Thickness >=1.5 um
Device Layer TTV < 1.0 um
Buried Oxide (Box) Thickness .1 to 4um (1.0um +/-5% standard)
Handle Wafer Materials CZ or FZ
Handle Wafer Orientations Any Orientation within diamond cubic system
Handle Wafer Thickness >= 200um for 100mm - 125mm, >=275um for 150mm-200mm
Handle Wafer TTV < 1.0um
Handle Wafer Back Surface Polished or Lapped & Etched
Overall Wafer TTV < 3 um
Overall Bow/Warp < 60 um